The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jun. 23, 2008
Chih-chao Yang, Poughkeepsie, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Nicholas C. Fuller, Ossining, NY (US);
Louis C. Hsu, Fishkill, NY (US);
Chih-Chao Yang, Poughkeepsie, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Nicholas C. Fuller, Ossining, NY (US);
Louis C. Hsu, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.