The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Jul. 19, 2006
Applicant:
Bin Wang, Seattle, WA (US);
Inventor:
Bin Wang, Seattle, WA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A graded junction space decreasing an implant concentration gradient between n-well and p-well regions of a semiconductor device is provided for enhancing breakdown voltage in high voltage applications. Split or unified FOX regions may be provided overlapping with the graded junction space. By using a p-well blocking layer to separate the p-well(s) and the n-well, breakdown voltage characteristic is improved without the cost of an additional mask or process change.