The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Oct. 28, 2009
Tse Nga NG, Mountain View, CA (US);
Ana C. Arias, Los Gatos, CA (US);
Sanjiv Sambandan, Sunnyvale, CA (US);
Robert A. Street, Palo Alto, CA (US);
Jurgen H. Daniel, San Francisco, CA (US);
Tse Nga Ng, Mountain View, CA (US);
Ana C. Arias, Los Gatos, CA (US);
Sanjiv Sambandan, Sunnyvale, CA (US);
Robert A. Street, Palo Alto, CA (US);
Jurgen H. Daniel, San Francisco, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
An organic non-volatile memory array including multiple pixels and associated signal lines that are disposed on and between a substrate, a single ferroelectric dielectric layer, and a single organic dielectric layer, where each pixel includes a ferroelectric field-effect transistor (FeFET) and at least one organic thin-film field effect transistor (FET) that are connected to associated signal lines in a way that facilitates addressable reading and writing to the FeFET of a selected pixel without disturbing the data stored in adjacent pixels. Analog data storage in the FeFET array is also introduced that does not require analog-to-digital conversion of the stored data.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile