The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8158522 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 17, 2012

Filed:

Sep. 10, 2010
Applicants:

Khalid M. Sirajuddin, San Jose, CA (US);

Digvijay Raorane, Chandler, AZ (US);

Jon C. Farr, Vallejo, CA (US);

Sharma V. Pamarthy, Fremont, CA (US);

Inventors:

Khalid M. Sirajuddin, San Jose, CA (US);

Digvijay Raorane, Chandler, AZ (US);

Jon C. Farr, Vallejo, CA (US);

Sharma V. Pamarthy, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers.


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