The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Dec. 08, 2009
Applicant:
Kazuhiro Nojima, Chuo-ku, JP;
Inventor:
Kazuhiro Nojima, Chuo-ku, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes forming silicon pillaron substrate, forming a protective film which covers an upper end portion and a lower end portion of a side surface of silicon pillar, forming a constricted portion by anisotropic etching in a portion of the side surface of silicon pillarwhich is not covered with the protective film after forming the protective film, removing the protective film after forming the constricted portion, forming gate oxide filmwhich covers the side surface of silicon pillarin which the constricted portion is formed, and forming gate electrodewhich covers gate oxide film