The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Oct. 02, 2006
Applicants:

Ralf Van Bentum, Moritzburg, DE;

Klaus Hempel, Dresden, DE;

Roland Stejskal, Freital, DE;

Inventors:

Ralf Van Bentum, Moritzburg, DE;

Klaus Hempel, Dresden, DE;

Roland Stejskal, Freital, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

By locally heating isolation trenches with different annealing conditions, a different magnitude of intrinsic stress may be obtained in different isolation trenches. In some illustrative embodiments, the different anneal temperature may be achieved on the basis of an appropriate mask layer, which may provide a patterned optical response for a lamp-based or laser-based anneal process. Consequently, the intrinsic stress of isolation trenches may be specifically adapted to the requirements of circuit elements, such as N-channel transistors and P-channel transistors.


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