The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8158305 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 17, 2012

Filed:

Dec. 30, 2009
Applicant:

Sung Hyun OH, Cheongju-si, KR;

Inventor:

Sung Hyun Oh, Cheongju-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.


Find Patent Forward Citations

Oh, Sung. (2012). Photomask for extreme ultraviolet lithography and method for fabricating the same (U.S. Patent No. 8158305). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8158305

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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