The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8156451 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 10, 2012

Filed:

Aug. 07, 2008
Applicants:

Yoshikazu Nagamura, Tokyo, JP;

Shogo Narukawa, Tokyo, JP;

Inventors:

Yoshikazu Nagamura, Tokyo, JP;

Shogo Narukawa, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 19/00 (2011.01);
U.S. Cl.
CPC ...
Abstract

A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.


Find Patent Forward Citations

Nagamura, Yoshikazu. (2012). Method of manufacturing photomask (U.S. Patent No. 8156451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8156451

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