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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8154017 B1

PDFFull Text
Date of Patent:
Apr. 10, 2012

Filed:

Apr. 15, 2008

Amorphous oxide semiconductor, semiconductor device, and thin film transistor

Applicants:

Hisato Yabuta, Machida, JP;

Ayanori Endo, Chigasaki, JP;

Nobuyuki Kaji, Kawasaki, JP;

Ryo Hayashi, Yokohama, JP;

Inventors:

Hisato Yabuta, Machida, JP;

Ayanori Endo, Chigasaki, JP;

Nobuyuki Kaji, Kawasaki, JP;

Ryo Hayashi, Yokohama, JP;

Assignee:

Canon Kabushiki Kaisha, Tokyo, JP;

Attorney:

Fitzpatrick, Cella, Harper & Scinto

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Ankush Singal

Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InGaZn, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below:≧0.94×(7.1215.9415.675)/()  (1)where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

Find Patent Forward Citations

Yabuta, Hisato. (2012). Amorphous oxide semiconductor, semiconductor device, and thin film transistor (U.S. Patent No. 8154017). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8154017

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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