The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Aug. 09, 2007
Applicants:
Tzyh-cheang Lee, Hsinchu, TW;
Fu-liang Yang, Hsin-Chu, TW;
Tseung-yuen Tseng, Hsin-Chu, TW;
Chih-yang Lin, Hsin-Chu, TW;
Inventors:
Tzyh-Cheang Lee, Hsinchu, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Tseung-Yuen Tseng, Hsin-Chu, TW;
Chih-Yang Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the variable resistive material layer; and a second electrode coupled to the metal oxide layer. In an embodiment, the metal oxide layer provides a constant resistance.