The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Sep. 19, 2011
Sai Hooi Yeong, Singapore, SG;
Tao Wang, Singapore, SG;
Shesh Mani Pandey, Singapore, SG;
Chia Ching Yeo, Singapore, SG;
Ying Keung Leung, Singapore, SG;
Elgin Kiok Boone Quek, Singapore, SG;
Sai Hooi Yeong, Singapore, SG;
Tao Wang, Singapore, SG;
Shesh Mani Pandey, Singapore, SG;
Chia Ching Yeo, Singapore, SG;
Ying Keung Leung, Singapore, SG;
Elgin Kiok Boone Quek, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
There is provided a method for fabricating a semiconductor device comprising the formation of a first device in the first device region, the first device comprising first diffusion regions. A stressor layer covering the substrate in the first device region and the first device is subsequently formed, the stressor layer having a first stress value. A laser anneal to memorize at least a portion of the first stress value in the first device is carried out followed by an activation anneal after the laser anneal to activate dopants in the first diffusion regions.