The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Mar. 11, 2009
Chen-pin Hsu, Taoyuan, TW;
Chung-long Cheng, Baoshan Township, Hsinchu County, TW;
Kong-beng Thei, Pao-Shan Village, TW;
Harry Chuang, Hsinchu, TW;
Chen-Pin Hsu, Taoyuan, TW;
Chung-Long Cheng, Baoshan Township, Hsinchu County, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Harry Chuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method for fabricating a semiconductor device protecting a resistive structure in gate replacement processing is disclosed. The method comprises providing a semiconductor substrate; forming at least one gate structure including a dummy gate over the semiconductor substrate; forming at least one resistive structure including a gate over the semiconductor substrate; exposing a portion of the gate of the at least one resistive structure; forming an etch stop layer over the semiconductor substrate, including over the exposed portion of the gate; removing the dummy gate from the at least one gate structure to create an opening; and forming a metal gate in the opening of the at least one gate structure.