The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Aug. 14, 2009
Jack O. Chu, Manhasset Hills, NY (US);
Guy M. Cohen, Mohegan Lake, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Jack O. Chu, Manhasset Hills, NY (US);
Guy M. Cohen, Mohegan Lake, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy.