The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Mar. 18, 2010
Kazuhito Nishitani, Kanagawa-ken, JP;
Eiji Ito, Kanagawa-ken, JP;
Machiko Tsukiji, Kanagawa-ken, JP;
Hiroyuki Fukumizu, Mie-ken, JP;
Naoya Hayamizu, Kanagawa-ken, JP;
Katsuhiro Sato, Kanagawa-ken, JP;
Kazuhito Nishitani, Kanagawa-ken, JP;
Eiji Ito, Kanagawa-ken, JP;
Machiko Tsukiji, Kanagawa-ken, JP;
Hiroyuki Fukumizu, Mie-ken, JP;
Naoya Hayamizu, Kanagawa-ken, JP;
Katsuhiro Sato, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Manufacturing a nonvolatile storage device including: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a substrate; processing the first electrode film and the first storage unit film into a strip shape; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer on the second electrode film; processing the second electrode film into a strip shape using the mask layer; removing a portion of the first storage unit film exposed from the sacrifice layer using the mask layer processing the first storage unit film into a columnar shape, removing the sacrifice layer exposing the first storage unit film; and removing the exposed first storage unit film.