The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Apr. 27, 2006
Subhas Chandra Bose Jayappa Veeramma, Lampertheim, DE;
Subhas Chandra Bose Jayappa Veeramma, Lampertheim, DE;
IXYS Corporation, Milpitas, CA (US);
Abstract
A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N− type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N− type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer having a thickness of 3 to 20 microns; a first field plate overlying the oxide layer; and second field plate overlying the polymide layer and the first field plate, wherein the second field plate overlaps the first field plate by 2 to 15 microns.