The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Mar. 02, 2010
Applicants:

Kuo-yu Liao, Hsinchu, TW;

Han-sung Chen, Hsinchu, TW;

Chun-hsiung Hung, Hsinchu, TW;

Inventors:

Kuo-Yu Liao, Hsinchu, TW;

Han-Sung Chen, Hsinchu, TW;

Chun-Hsiung Hung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to a magnitude of an operating voltage between first and second nodes. During a first time interval, the operating voltage is set in response to a magnitude of the reference current using a feedback path. During a second time interval following the first time interval, the operating voltage is held independent of the feedback path. The data value stored in the memory cell is determined based on a difference in current between the read current and the sink current during the second time interval.


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