The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Sep. 09, 2010
Applicants:
Chun-hsiung Hung, Hsinchu, TW;
Shuo-nan Hung, Jhubei, TW;
Tseng-yi Liu, Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.
Hung, Chun-Hsiung. (2012). Method and apparatus for reducing read disturb in memory (U.S. Patent No. 8149624). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8149624
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