The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Mar. 09, 2010
Masato Koyama, Miura-gun, JP;
Akira Nishiyama, Yokohama, JP;
Yoshinori Tsuchiya, Yokohama, JP;
Reika Ichihara, Tokyo, JP;
Masato Koyama, Miura-gun, JP;
Akira Nishiyama, Yokohama, JP;
Yoshinori Tsuchiya, Yokohama, JP;
Reika Ichihara, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.