The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Nov. 20, 2007
Ryo Hayashi, Yokohama, JP;
Nobuyuki Kaji, Kawasaki, JP;
Hisato Yabuta, Machida, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a bottom gate type thin film transistor including on a substrate () a gate electrode (), a first insulating film () as a gate insulating film, an oxide semiconductor layer () as a channel layer, a second insulating film () as a protective layer, a source electrode (), and a drain electrode (), in which the oxide semiconductor layer () includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film () includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer () and contains therein 3.8×10molecules/cmor more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile