The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 18, 2008
Applicants:
Yusuke Fukuchi, Yokohama, JP;
Naomu Kitano, Machida, JP;
Inventors:
Yusuke Fukuchi, Yokohama, JP;
Naomu Kitano, Machida, JP;
Assignees:
Canon Kabushiki Kaisha, Tokyo, JP;
Canon Anelva Corporation, Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/71 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.