The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Jan. 25, 2010
Vance Dunton, San Jose, CA (US);
Raghuveer S. Makala, Sunnyvale, CA (US);
Michael Chan, Mountain View, CA (US);
Vance Dunton, San Jose, CA (US);
Raghuveer S. Makala, Sunnyvale, CA (US);
Michael Chan, Mountain View, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.