The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Apr. 24, 2007
Tomoki Uemura, Itami, JP;
Takashi Sakurada, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Hideaki Nakahata, Itami, JP;
Tomoki Uemura, Itami, JP;
Takashi Sakurada, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystalat a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regionsreduces dislocations inherited from the dislocation-concentrated regions or inverted regions, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions. This also increases the crystallinity of the gallium nitride crystaland its resistance to cracking during the polishing.