The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Dec. 18, 2009
Jianmin Huang, Sunnyvale, CA (US);
Chris Avila, Sunnyvale, CA (US);
Lee M. Gavens, Milpitas, CA (US);
Neil David Hutchinson, Larbert, GB;
Sergey Anatolievich Gorobets, Edinburgh, GB;
Jianmin Huang, Sunnyvale, CA (US);
Chris Avila, Sunnyvale, CA (US);
Lee M. Gavens, Milpitas, CA (US);
Neil David Hutchinson, Larbert, GB;
Sergey Anatolievich Gorobets, Edinburgh, GB;
SanDisk Technologies Inc., Plano, TX (US);
Abstract
A memory system and methods of its operation are presented. The memory system includes a volatile buffer memory and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. When writing data to the non-volatile memory, the data is received from a host, stored in the buffer memory, transferred from the buffer memory to into read/write registers of the non-volatile memory circuit, and then written from the read/write registers to the first section of the non-volatile memory circuit using a binary write operation. Portions of the data and then subsequently folded from the first section of the non-volatile memory to the second section of the non-volatile memory, where a folding operation includes reading the portions of the data from multiple locations in the first section into the read/write registers and performing a multi-state programming operation of the portions of the data from the read/write registers into a location the second section of the non-volatile memory. The multi-state programming operations include a first phase and a second phase and one or more of the binary write operations are performed between the phases of the multi-state programming operations.