The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jun. 09, 2009
Yusuke Morita, Akishima, JP;
Ryuta Tsuchiya, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Nobuyuki Sugii, Tokyo, JP;
Shinichiro Kimura, Kunitachi, JP;
Yusuke Morita, Akishima, JP;
Ryuta Tsuchiya, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Nobuyuki Sugii, Tokyo, JP;
Shinichiro Kimura, Kunitachi, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
Performance of a semiconductor device having a MIS transistor is improved. A semiconductor device includes: a pair of source/drain regions each formed by stacking a semiconductor layer on a main surface of a silicon substrate; a sidewall insulating film covering each sidewall of the source/drain regions; a gate electrode arranged so as to interpose a gate insulating film on the main surface of the silicon substrate at a position sandwiched by the sidewall insulating films in a plane; and extension regions formed to extend from a portion below and lateral to the gate electrode to a portion below and lateral to each of the source/drain regions, wherein a sidewall of the sidewall insulating film being adjacent to the gate insulating film and the gate electrode has an inclination of a forward tapered shape.