The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Jul. 28, 2011
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, Sunnyvale, CA (US);
Andre Strittmatter, Menlo Park, CA (US);
Mark R. Teepe, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Zhihong Yang, Sunnyvale, CA (US);
Andre Strittmatter, Menlo Park, CA (US);
Mark R. Teepe, Menlo Park, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A relaxed InGaN template is formed by growing a GaN or InGaN nucleation layer at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures on the nucleation layer. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.