The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Nov. 29, 2007
Hideyuki Omura, Tokyo, JP;
Ryo Hayashi, Yokohama, JP;
Nobuyuki Kaji, Kawasaki, JP;
Hisato Yabuta, Machida, JP;
Hideyuki Omura, Tokyo, JP;
Ryo Hayashi, Yokohama, JP;
Nobuyuki Kaji, Kawasaki, JP;
Hisato Yabuta, Machida, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.