The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
May. 28, 2008
Yong Liu, Scarborough, ME (US);
Qiuxiao Qian, Suzhou Jiangsu, CN;
Jiangyuan Zhang, Suzhou Jiangsu, CN;
Mike Speed, Santa Clara, CA (US);
Jungtae Lee, Bucheon-si, KR;
Huiyong Luke Chung, Yongin, KR;
Yong Liu, Scarborough, ME (US);
Qiuxiao Qian, Suzhou Jiangsu, CN;
JiangYuan Zhang, Suzhou Jiangsu, CN;
Mike Speed, Santa Clara, CA (US);
JungTae Lee, Bucheon-si, KR;
Huiyong Luke Chung, Yongin, KR;
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A molded, leadless packaged semiconductor multichip module includeshas four mosfetsfor a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In modulethere are two leadframesfor assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound. The resulting package has four upper heat sinks-that are exposed in the molding compoundfor transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDS. The top or source-drain lead framemay be soldered to the sources and gates of the bridge mosfets.