The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2012

Filed:

Mar. 27, 2008
Applicants:

Xunqing Shi, Singapore, SG;

Wei MA, Tseung Kwan O, HK;

Bin Xie, Fanling Centre, HK;

Chang Hwa Chung, Shatin, HK;

Inventors:

Xunqing Shi, Singapore, SG;

Wei Ma, Tseung Kwan O, HK;

Bin Xie, Fanling Centre, HK;

Chang Hwa Chung, Shatin, HK;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.


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