The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
May. 12, 2010
Young-jo Tak, Hwaseong-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Jae-won Lee, Suwon-si, KR;
Hyung-su Jeong, Suwon-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Jae-won Lee, Suwon-si, KR;
Hyung-su Jeong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.