The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jun. 24, 2008
Stoyan Nihtianov, Eindhoven, NL;
Arie Johan Van Der Sijs, Veldhoven, NL;
Bearrach Moest, Eindhoven, NL;
Petrus Wilhelmus Joseph Maria Kemper, Waalre, NL;
Marc Antonius Maria Haast, Eindhoven, NL;
Gerardus Wilhelmus Petrus Baas, Weert, NL;
Lis Karen Nanver, Zoetermeer, NL;
Francesco Sarubbi, Delft, NL;
Antonius Andreas Johannes Schuwer, Waalwijk, NL;
Gregory Micha Gommeren, Wouw, NL;
Martijn Pot, Den Ham, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
Stoyan Nihtianov, Eindhoven, NL;
Arie Johan Van Der Sijs, Veldhoven, NL;
Bearrach Moest, Eindhoven, NL;
Petrus Wilhelmus Joseph Maria Kemper, Waalre, NL;
Marc Antonius Maria Haast, Eindhoven, NL;
Gerardus Wilhelmus Petrus Baas, Weert, NL;
Lis Karen Nanver, Zoetermeer, NL;
Francesco Sarubbi, Delft, NL;
Antonius Andreas Johannes Schuwer, Waalwijk, NL;
Gregory Micha Gommeren, Wouw, NL;
Martijn Pot, Den Ham, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.