The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Dec. 11, 2008
Ohhan Kim, Kyunggi-Do, KR;
Joungun Park, Kyunggi-Do, KR;
Sunmi Kim, KyoungKi-do, KR;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected.