The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Oct. 10, 2008
Yunwei Charles Cao, Gainesville, FL (US);
Ou Chen, Gainesville, FL (US);
Yunwei Charles Cao, Gainesville, FL (US);
Ou Chen, Gainesville, FL (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Abstract
A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.