The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2012

Filed:

Jan. 06, 2011
Applicants:

Kozo Makiyama, Kawasaki, JP;

Naoya Ikechi, Yamanashi, JP;

Takahiro Tan, Yamanashi, JP;

Inventors:

Kozo Makiyama, Kawasaki, JP;

Naoya Ikechi, Yamanashi, JP;

Takahiro Tan, Yamanashi, JP;

Assignees:

Fujitsu Limited, Kawasaki, JP;

Fujitsu Quantum Devices Limited, Yamanashi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/28 (2006.01); H01L 21/44 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.


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