The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Dec. 23, 2008
Applicants:
Jung-chuan Chou, Yunlin County, TW;
Cheng-wei Chen, Pingtung, TW;
Yu-huei Jiang, Miaoli County, TW;
Inventors:
Assignee:
National Yunlin University of Science and Technology, Yunlin, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.
Chou, Jung-Chuan. (2012). Method for forming extended gate field effect transistor (egfet) based sensor and the sensor therefrom (U.S. Patent No. 8133750). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8133750
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile