The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jul. 11, 2008
Sang Won Kang, Gyeonggi-do, KR;
Yong Chun Kim, Gyeonggi-do, KR;
Dong Hyun Cho, Gyeonggi-do, KR;
Jeong Tak OH, Gyeonggi-do, KR;
Dong Joon Kim, Gyeonggi-do, KR;
Sang Won Kang, Gyeonggi-do, KR;
Yong Chun Kim, Gyeonggi-do, KR;
Dong Hyun Cho, Gyeonggi-do, KR;
Jeong Tak Oh, Gyeonggi-do, KR;
Dong Joon Kim, Gyeonggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.