The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Nov. 13, 2009
Akiyoshi Seko, Tokyo, JP;
Yukio Fuji, Tokyo, JP;
Natsuki Sato, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A nonvolatile memory device () is provided with a semiconductor substrate, a plurality of active regions () formed on the semiconductor substrate and extending in a band, a plurality of select active elements () formed in the active regions () and having a first impurity diffusion region and a second impurity diffusion region, a plurality of first electrodes () electrically connected to the first impurity diffusion region, a variable resistance layer () electrically connected to the first electrodes (), and a plurality of second electrodes electrically connected to the variable resistance layer (). Among the plurality of first electrodes () and the plurality of second electrodes, an array direction of at least one pair of the first electrodes () and the second electrodes that are electrically connected to the same variable resistance layer (), and a direction of extension of the activation regions () are not parallel.