The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jul. 24, 2009
Rongjun Wang, Dublin, CA (US);
Xianmin Tang, San Jose, CA (US);
Dengliang Yang, Fremont, CA (US);
Zhendong Liu, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
Xianmin Tang, San Jose, CA (US);
Dengliang Yang, Fremont, CA (US);
Zhendong Liu, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius.