The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
May. 12, 2006
Tian-shuan Luo, Hsinchu, TW;
Chun-pei Wu, Hsinchu, TW;
Tian-Shuan Luo, Hsinchu, TW;
Chun-Pei Wu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of manufacturing a flash memory device having an enhanced gate coupling ratio includes steps of forming a first semiconductor layer on a substrate and forming a semiconductor spacer layer on top of the first semiconductor layer. The semiconductor spacer layer includes a plurality of recesses. The method provides a semiconductor spacer structure which functions to increase the contact area between a floating gate and a control gate of the flash memory device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile