The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Mar. 06, 2009
Applicants:
Wen-hsien Huang, Tainan County, TW;
Min-chieh Yang, Kaohsiung, TW;
Jiunn-hsing Liao, Tainan County, TW;
Inventors:
Wen-Hsien Huang, Tainan County, TW;
Min-Chieh Yang, Kaohsiung, TW;
Jiunn-Hsing Liao, Tainan County, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.