The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Feb. 01, 2010
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamua, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Paul T. Fini, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamua, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, Saitama Prefecture, JP;
Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {101} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {103 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {112} gallium nitride (GaN) grown on a {100} sapphire substrate, and (4) {103} gallium nitride (GaN) grown on a {100} sapphire substrate.