The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Oct. 11, 2007
Ryosuke Nakagawa, Kyoto, JP;
Takahisa Yamaha, Kyoto, JP;
Yuichi Nakao, Kyoto, JP;
Katsumi Sameshima, Kyoto, JP;
Satoshi Kageyama, Kyoto, JP;
Ryosuke Nakagawa, Kyoto, JP;
Takahisa Yamaha, Kyoto, JP;
Yuichi Nakao, Kyoto, JP;
Katsumi Sameshima, Kyoto, JP;
Satoshi Kageyama, Kyoto, JP;
ROHM Co., Ltd., Kyoto, JP;
Abstract
A semiconductor device according to the present invention includes: a semiconductor substrate; a first copper interconnection provided on the semiconductor substrate; an insulating layer provided over the first copper interconnection and having a hole extending therethrough to the first copper interconnection; a barrier layer composed of a tantalum-containing material and covering at least a sidewall of the hole and a part of the first copper interconnection exposed in the hole; and a second copper interconnection provided in intimate contact with the barrier layer and electrically connected to the first copper interconnection via the barrier layer; wherein the barrier layer has a nitrogen concentration profile such that the concentration of nitrogen contained in the material varies to be lower in a boundary portion of the barrier layer adjacent to the first copper interconnection and in a boundary portion of the barrier layer adjacent to the second copper interconnection and higher in an intermediate portion of the barrier layer defined between the boundary portions.