The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 05, 2008
Hung-shern Tsai, Tainan County, TW;
Geeng-lih Lin, Hsinchu Hsien, TW;
Wen-jya Liang, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
Semiconductor devices for high voltage application are presented. A high power semiconductor device includes a first type doped semiconductor substrate and a second type doped epitaxial layer deposited thereon. A first type doped body region is disposed in the second type doped epitaxial layer. A heavily doped drain region is formed in the second type doped epitaxial layer and isolated from the first type doped body region with an isolation region and a channel. A second type deep heavily doped region extends from the heavily doped drain region to the semiconductor substrate. A pair of inversed type heavily doped source regions is disposed in the first type doped body region. A gate electrode is disposed overlying the channel with a dielectric layer interposed therebetween. The high power semiconductor device is isolated from the other semiconductor devices with a first type deep heavily doped region.