The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 17, 2006
Chiu-chih Chiang, Hsinchu, TW;
Chih-feng Huang, Zhubei, TW;
You-kuo Wu, Sijhih, TW;
Long Shih Lin, Jhubei, TW;
Chiu-Chih Chiang, Hsinchu, TW;
Chih-Feng Huang, Zhubei, TW;
You-Kuo Wu, Sijhih, TW;
Long Shih Lin, Jhubei, TW;
System General Corporation, Taipei, TW;
Abstract
A Schottky device and a semiconductor process of making the same are provided. The Schottky device comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped region with the second type of ions in the deep well. Wherein the deep well has a geometry gap with a width formed under the Schottky contact, the first type of ions and the second type of ions are complementary, and the width of the gap adjusts the breakdown voltage.