The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jun. 10, 2008
Christopher L. Rexer, Mountain Top, PA (US);
Gary M. Dolny, Mountain Top, PA (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Joseph Shovlin, Greene, ME (US);
Christopher L. Rexer, Mountain Top, PA (US);
Gary M. Dolny, Mountain Top, PA (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Joseph Shovlin, Greene, ME (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.