The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
May. 28, 2004
Applicants:
Kramadhati V. Ravi, Atherton, CA (US);
Yuli Chakk, Ashdod, IL;
Inventors:
Kramadhati V. Ravi, Atherton, CA (US);
Yuli Chakk, Ashdod, IL;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
The porosity of a diamond film may be increased and its dielectric constant lowered by exposing a film containing sphybridization to ion implantation. The implantation produces a greater concentration of sphybridizations. The sphybridizations may then be selectively etched, for example, using atomic hydrogen plasma to increase the porosity of the film. A series of layers may be deposited and successively treated in the same fashion to build up a composite, porous diamond film.