The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jan. 27, 2011
Insik Jin, Eagan, MN (US);
Christina Hutchinson, Eden Prairie, MN (US);
Richard Larson, Brooklyn Park, MN (US);
Lance Stover, Eden Prairie, MN (US);
Jaewoo Nam, Eden Prairie, MN (US);
Andrew Habermas, Bloomington, MN (US);
Insik Jin, Eagan, MN (US);
Christina Hutchinson, Eden Prairie, MN (US);
Richard Larson, Brooklyn Park, MN (US);
Lance Stover, Eden Prairie, MN (US);
Jaewoo Nam, Eden Prairie, MN (US);
Andrew Habermas, Bloomington, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.