The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
May. 15, 2006
Hongmei Wen, South Windsor, CT (US);
Thomas Henry Vanderspurt, Glastonbury, CT (US);
Susanne M. Opalka, Glastonbury, CT (US);
Susan D. Brandes, South Windsor, CT (US);
Leland G. Brandes, Legal Representative, South Windsor, CT (US);
Hongmei Wen, South Windsor, CT (US);
Thomas Henry Vanderspurt, Glastonbury, CT (US);
Susanne M. Opalka, Glastonbury, CT (US);
Susan D. Brandes, South Windsor, CT (US);
Leland G. Brandes, legal representative, South Windsor, CT (US);
Carrier Corporation, Farmington, CT (US);
Abstract
Deactivation resistant photocatalysts can be formulated by coating one or more photocatalyst crystals onto a suitable substrate. The photocatalyst crystals are doped with a dopant M. The dopant can be used to repel the silicon-based compound or be used to attract the silicon-based compound. The dopant can uniformly be distributed in the photocatalyst crystals. The dopant can be introduced only to photocatalyst crystals between about 0.1 to about 2 nanometers below the surface of the structure. The doped photocatalyst crystals can be interdispersed with non-doped photocatalyst crystals.