The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Jul. 16, 2010
Jin-hyock Kim, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Seung-jin Yeom, Ichon-shi, KR;
Kee-jeung Lee, Ichon-shi, KR;
Han-sang Song, Ichon-shi, KR;
Deok-sin Kil, Ichon-shi, KR;
Young-dae Kim, Ichon-shi, KR;
Jin-Hyock Kim, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
Seung-Jin Yeom, Ichon-shi, KR;
Kee-Jeung Lee, Ichon-shi, KR;
Han-Sang Song, Ichon-shi, KR;
Deok-Sin Kil, Ichon-shi, KR;
Young-Dae Kim, Ichon-shi, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug fainted on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile