The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Feb. 21, 2008
Daniel C. Edelstein, White Plains, NY (US);
Anil K. Chinthakindi, Wappingers Falls, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Ebenezer E. Eshun, Newburgh, NY (US);
Jeffrey P. Gambino, Westford, VT (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Anthony K. Stamper, Williston, VT (US);
Daniel C. Edelstein, White Plains, NY (US);
Anil K. Chinthakindi, Wappingers Falls, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Ebenezer E. Eshun, Newburgh, NY (US);
Jeffrey P. Gambino, Westford, VT (US);
Sarah L. Lane, Wappingers Falls, NY (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention achieves a capacitor that minimizes capacitance tolerance and preserves symmetry in parasitic electrode-substrate capacitive coupling, without adversely affecting other interconnects and via contacts formed in the same wiring level, through the use of, at most, one additional noncritical, photomask.