The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Nov. 05, 2010
Applicants:

Yuhao Luo, San Jose, CA (US);

Deepak Kumar Nayak, Fremont, CA (US);

Inventors:

Yuhao Luo, San Jose, CA (US);

Deepak Kumar Nayak, Fremont, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device exhibiting enhanced carrier mobility within a channel region of the semiconductor device is disclosed. The semiconductor device includes a gate stack having first and second sidewall spacers, where the gate stack is implemented above the channel region of the semiconductor device. The semiconductor device further includes first and second trenches formed adjacent to the gate stack, where the first and second trenches are conically shaped to be wider at a top portion of each trench as compared to a width of each trench below the top portion of each trench. The semiconductor device further includes strained silicon alloy formed within the first and second trenches, where a stress force exerted on the channel region of the semiconductor device is maximized at a surface of the semiconductor device below the gate stack.


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